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1GB DDR2 SDRAM SO-DIMM
128Mx64bits DDR2 SDRAM 200pin SODIMM based on 128Mx8
Performance range
Part No. Max Freq. Interface
MVOVE1A08342 400MHz (CL=5) SSTL_1.8
Address Table
Density Organization Ranks SDRAMS # of
DRAMS
# of row/banks/columns address Refresh
Method
1GB 128Mx64 1 128Mbx8 8 14(A0~A13)/3(BA0~BA2)/10(A0~A9) 8K/64ms
Pin Configration
General Description
The MVOVE1A08342 is 128Mx64 bits DDR2
SDRAM Module, The module is composed of eight
128Mx8 bits CMOS DDR2 SDRAMs in FBGA
package and one 2Kbit EEPROM in 8pin
TSSOP(TSOP) package on a 200pin glass?epoxy
printed circuit board.
The MVOVE1A08342 is a Dual In-line Memory
Module and intended for mounting onto 200-pins edge
connector sockets. Synchronous design allows
precise cycle control with the use of system clock.
Data I/O transactions are possible on both edges of
DQS. Range of operating frequencies, programmable
latencies and burst lengths allow the same device to
be useful for a variety of high bandwidth, high
performance memory system applications.
Features
Power supply: VDD & VDDQ = 1.8V ± 0.1V
1.8V (SSTL_18 compatible) I/O
MRS Cycle with address key programs
-CAS Latency (3, 4, 5)
-Burst Length (4,8)
Programmable Additive Latency:0,1,2,3,4
Bi-directional, differential data strobe (DQS and /DQS)
Differential clock input (CK, /CK) operation
DLL aligns DQ and DQS transition with CK transition
Double-data-rate architecture.
Auto refresh and self refresh
Average Refresh period 7.8 us
Off-Chip Driver(OCD) Impedance Adjustment
On Die Termination
Lead-free products are RoHS compliant
Recomendado para Core Duo, Dual Core, Core 2 Duo, Core 2 Quad, Turion 64, etc,
Aprovecha toda la potencia de tu notebook, ideal para agilizar el funcionamiento y el rendimiento de tu Microprocesador
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